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TISP8210MD BUFFERED P-GATE SCR DUAL TISP8211MD BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
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TISP821xMD Overvoltage Protectors
High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8210MD Negative Overvoltage Protector - Wide 0 to -110 V Programming Range - Low +5 mA Max. Gate Triggering Current - High -150 mA Min. Holding Current TISP8211MD Positive Overvoltage Protector - Wide 0 to +110 V Programming Range - Low -5 mA Max. Gate Triggering Current - +20 mA Min. Holding Current Rated for International Surge Wave Shapes
Wave Shape 2/10 10/700 10/1000 Standard GR-1089-CORE ITU-T K.20/21/45 GR-1089-CORE IPPSM A 167 70 60
A G2 A G1
TISP8210MD 8-SOIC Package (Top View)
G1 K1 K2 G2
1 2 3 4
8 7 6 5
NC A A NC
MDRXAKC
NC - No internal connection
TISP8210MD Device Symbol
K1
..................................................UL Recognized Component
K2
SDRXAJB
Circuit Application Diagram TISP8211MD 8-SOIC Package (Top View)
SLIC PROTECTION Tip C2 100 nF
G1 A1 A2 G2
1 2 3 4
8 7 6 5
NC K K NC
MDRXALC
NC - No internal connection
C1 100 nF
TISP8211MD Device Symbol
A1
Ring TISP8210MD TISP8211MD +V BAT - VBAT
AI-TISP8-003-a
G1 K K G2
A2
SDRXAKB
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex JANUARY 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Description
The TISP8210MD / TISP8211MD protector combination has been designed to protect dual polarity supply rail SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been designed using the latest understanding of programmable protector technology to maximize performance. The TISP8210MD and TISP8211MD are complementary programmable protection devices. The program or gate pins (G1, G2) are connected to the positive and negative SLIC battery supplies to give protection which will track the SLIC supply levels. The integrated transistor buffer is an essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary loading of the power supply. The TISP8210MD / TISP8211MD combination is designed to be used in conjunction with the 12.5 Bourns(R) 4A12P-1AH-12R5 Line Protection Module (LPM). With this solution the application should pass Telcordia GR-1089-CORE testing with the 4A12P-1AH-12R5 acting as the overcurrent protector and coordination element. The TISP(R) device plus LPM solution is designed to work in harmony with the system primary protectors. GR-1089-CORE issue 3 lists test to allow for three types of primary protection: Carbon Block (1000 V); Gas Discharge Tube (600 V) and Solid State (400 V). This solution is designed to be used with the GDT and Solid State options. Under lightning conditions the current through the 12.5 LPM will be 48 A (600 V / 12.5 ), which is well within the 60 A capability of the TISP8210MD / TISP8211MD combination.
How to Order
Device TISP8210MD T I SP 8 2 1 1 M D Package 8-SOIC Carrier Embossed Tape Reeled Order As TISP8210MDR-S T IS P 82 11 M D R- S Marking Code 8210M 8 21 1M Standard Quantity 2500
TISP8210MD Absolute Maximum Ratings, TA = 25 C
R at i n g Repetitive peak off-state voltage, VGK = 0 Repetitive peak reverse voltage, VGA = -70 V Non-repetitive peak impulse current (see Note 1) 2/10 s (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 5/310 s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45) 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2) 100 ms 1s 5s 300 s 900 s Junction temperature Storage temperature range -11 -6.5 -3.4 -1.4 -1.3 -55 to +150 -65 to +150 IPPSM -167 -70 -60 A Sy mbol VDRM VRRM Value -120 120 U nit V
ITSM
A
TJ Tstg
C C
NOTES: 1. Initially the protector must be in thermal equilibrium with T = 25 C. The surge may be repeated after the device returns to its initial J conditions. 2. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
JANUARY 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8211MD Absolute Maximum Ratings, TA = 25 C
R at i n g Repetitive peak off-state voltage, VGA = 0 Repetitive peak reverse voltage, VGK = 70 V Non-repetitive peak impulse current (see Note 3) 2/10 s (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 5/310 s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45) 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current, 50/60 Hz (see Notes 3 and 4) 100 ms 1s 5s 300 s 900 s Junction temperature Storage temperature range 11 6.5 3.4 1.4 1.3 -55 to +150 -65 to +150 IPPSM 167 70 60 A Sy m b o l VDRM VRRM Value 120 -120 U nit V
ITSM
A
TJ Tstg
C C
NOTES: 3. Initially the protector must be in thermal equilibrium with T = 25 C. The surge may be repeated after the device returns to its initial J conditions. 4. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
Recommended Operating Conditions
See Figure 3 C1, C 2 R1, R 2 Gate decoupling capacitor Series resistance for Telcordia GR-1089-CORE Min 1 00 10 Typ 22 0 12 .5 Max Unit nF
TISP8210MD Electrical Characteristics, TA = 25 C
Parameter IDRM IRRM V(BO) IH IGT CO Repetitive peak off-state current Repetitive peak reverse current Breakover voltage Holding current Gate trigger current Off-state capacitance VD = VDRM, VGK = 0 VR = VRRM, VGA = -70 V dv/dt = -250 V/ms, RSOURCE = 300 , VGA = -80 V (IK) IT = -1 A, di/dt = 1 A/ms, VGA = -80 V (IK) IT = -5 A, tp(g) 20 s, VGA = -80 V f = 1 MHz, Vd = 1 V, VD = 2 V - 15 0 5 40 Test Conditions Min Typ Max Unit -5 5 - 82 A A V mA mA pF
TISP8211MD Electrical Characteristics, TA = 25 C
Parameter IDRM IRRM V(BO) IH IGT CO Repetitive peak off-state current Repetitive peak reverse current Breakover voltage Holding current Gate trigger current Off-state capacitance VD = VDRM, VGA = 0 VR = VRRM, VGK = 70 V dv/dt = 250 V/ms, RSOURCE = 300 , VGK = 80 V (IA) IT = 1 A, di/dt = -1 A/ms, VGK = 80 V (IA) IT = 5 A, tp(g) 20 s, VGK = 80 V f = 1 MHz, Vd = 1 V, VD = 2 V 20 -5 30 Test Conditions Min Typ Max 5 -5 82 Unit A A V mA mA pF
Thermal Characteristics
Parameter RJA Junction to ambient thermal resistance Test Conditions Ptot = 0.52 W, TA = 70 C, 5 cm 2, FR4 PCB Min Typ Max 16 0 U nit C/W
JANUARY 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Parameter Measurement Information
+i Quadrant I Blocking Characteristic
V GK(BO) V GA VD IR ID VR V RRM IRRM
-v
+v
IH V(BO) ITSM Quadrant III Switching Characteristic IPPSM -i
PM8XACBa
Figure 1. TISP8210MD KA Terminal Characteristic
+i IPPSM Quadrant I Switching Characteristic ITSM V(BO) IH V RRM IRRM VR
-v
ID IR VD V GK V GA(BO)
+v
Quadrant III Blocking Characteristic
-i
PM8XABBa
Figure 2. TISP8211MD AK Terminal Characteristic
JANUARY 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Applications Information
C2 100 nF
Primary Protection
Overcurrent Protection TISP8211MD
0V
TISP8210MD
RING
SLIC
TIP V BATH Telcordia GR-1089-CORE Issue 3 compliant LPM (Bourns 4A12P-1AH-12R5) C1 100 nF
0V
AI-TISP8-004-a
Figure 3. Typical Application Circuit
JANUARY 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116
Technical Assistance Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116
www.bourns.com
Bourns(R) products are available through an extensive network of manufacturer's representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. COPYRIGHT(c) 2006, BOURNS, INC. LITHO IN U.S.A. e 03/06 TSP0610
JANUARY 2006 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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